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US Patent Issued to ASM IP Holding on Nov. 3 for "Method of forming patterned features" (Belgian Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,722, issued on Nov. 3, was assigned to ASM IP Holding B.V. (Almere, Netherlands). "Method of forming patterned features" was invented by Yoa... Read More


US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING, TSMC NANJING on Nov. 3 for "System, apparatus, and method for improving photoresist coating operations" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,723, issued on Nov. 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan) and TSMC NANJING COMPANY Ltd. (Nanji... Read More


US Patent Issued to Applied Materials on Nov. 3 for "Neutral stress diamond-like carbon" (California Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,724, issued on Nov. 3, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "Neutral stress diamond-like carbon" was invented by Ji... Read More


US Patent Issued to Tokyo Electron on Nov. 3 for "Selective deposition on an existing patterned mask" (New York Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,725, issued on Nov. 3, was assigned to Tokyo Electron Ltd. (Tokyo). "Selective deposition on an existing patterned mask" was invented by Ale... Read More


US Patent Issued to Tokyo Electron on Nov. 3 for "Substrate processing method and substrate processing apparatus" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,726, issued on Nov. 3, was assigned to Tokyo Electron Ltd. (Tokyo). "Substrate processing method and substrate processing apparatus" was inv... Read More


US Patent Issued to Hangzhou HFC Semiconductor on Nov. 3 for "Isolation structure for eDRAM and method for making same" (Singaporean, Chinese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,727, issued on Nov. 3, was assigned to Hangzhou HFC Semiconductor Co. (Hangzhou, China). "Isolation structure for eDRAM and method for makin... Read More


US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 3 for "Semiconductor device and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,728, issued on Nov. 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor device and method f... Read More


US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 3 for "Method of forming patterns, package, and manufacturing method of package" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,729, issued on Nov. 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Method of forming patterns, package, ... Read More


US Patent Issued to Lam Research on Nov. 3 for "Electrodeposition of cobalt tungsten films" (Oregon, Illinois Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,730, issued on Nov. 3, was assigned to Lam Research Corp. (Fremont, Calif.). "Electrodeposition of cobalt tungsten films" was invented by Ti... Read More


US Patent Issued to Applied Materials on Nov. 3 for "Method of forming interconnect for semiconductor device" (California Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,731, issued on Nov. 3, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "Method of forming interconnect for semiconductor devic... Read More